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We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si)…
The surface structure of SrTiO3(001) thin films homoepitaxially grown by PLD in step-flow mode was characterized using low temperature STM. It was found that one-dimensional (1D) TiOx-based nanostructures were formed on the thin film…
We investigate the hetero-epitaxial growth of thin film deposited on a (001) substrate via molecular dynamics simulations, using six fcc transition metals as our modeling systems. By studying the radial distribution function in the film…
We report epitaxial growth of $\beta$-Ag2Te thin films by molecular beam epitaxy. $\beta$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at…
Immense interests in thin-film fabrication for industrial applications have driven both theoretical and computational aspects of modeling its growth with an aim to design and control film's surface morphology. Oftentimes, smooth surface is…
Films of Bi$\rm _2$Sr$\rm _2$CaCu$\rm _2$O$\rm _8$ and Bi$\rm _2$Sr$\rm _2$CuO$\rm _6$ have been grown using Atomic-Layer-by-Layer Molecular Beam Epitaxy (ALL-MBE) on lattice-matched substrates. These materials have been combined with…
A newly identified class of magnetic materials called altermagnets has attracted much attention due to the practical properties of spin-splitting bands akin to ferromagnets and small compensated magnetization akin to antiferromagnets. These…
In this study, we report the epitaxial growth of a series of {\alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An enhanced…
We report growth and characterization of epitaxial $\alpha$-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on…
We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and…
Epitaxial thin-film growth is a versatile and powerful technique for achieving a precise control of composition, stabilizing non-equilibrium phases, tailoring growth orientation, as well as forming heterointerfaces of various quantum…
Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van…
BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2…
We present our study of (0001) oriented Mn$_3$Sn (c-Mn$_3$Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn$_3$Sn growth can be controlled through slight…
$\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a…
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct…
The structure, morphology, and electrical properties of epitaxial a-axis oriented thin films of Nd(0.2)Sr(0.8)MnO(3) are reported for thicknesses 10 nm <= t <= 150 nm. Films were grown with both tensile and compressive strain on various…
CoFe2O4 thin films (5 nm and 20 nm thick) were grown by oxygen assisted molecular beam epitaxy on Pt(111) at 523~K and subsequently annealed at 773 K in vacuum or oxygen. They were characterized in-situ using Auger Electron Spectroscopy,…
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of…