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Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the…

Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality…

We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $\omega$ full width half max of $7.7^{''}$…

As progress is made on thin-film synthesis of Heusler compounds, a more complete understanding of the surface will be required to control their properties, especially as functional heterostructures are explored. Here, the surface…

Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional…

NiFe$_2$O$_4$ thin films with varying thickness were grown on SrTiO$_3$(001) by reactive molecular beam epitaxy. Soft and hard x-ray photoelectron spectroscopy measurements reveal a homogeneous cation distribution throughout the whole film…

The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and…

Theoretical and experimental studies of intrinsic Josephson junctions that naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+{\delta} (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation…

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…

Ba(Fe1-xCox)2As2 superconducting thin films have been grown on SrTiO3, (La,Sr)(Al,Ta)O3, LaAlO3 and YAlO3 (YAO) single crystal substrates by pulsed laser deposition. All the films, except on YAO, have been grown epitaxially without buffer…

We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te…

We report epitaxial growth and characterization of GaN thin films on sapphire (0001) substrates using low temperature GaN intermediate layer by plasma assisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaN thin films…

The film growth of Mn$_3$O$_4$(001) films on Ag(001) up to film thicknesses of almost seven unit cells of Mn$_3$O$_4$ has been monitored using a complementary combination of near-edge X-ray absorption fine structure spectroscopy (NEXAFS),…

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states…

The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…

This article explores the structural properties of molecular beam epitaxy grown {CdO/MgO} superlattices on sapphire substrates of different crystallographic orientations (a-, c-, r-, and m-plane). The investigations involve a comprehensive…

We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band…

The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however,…

We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in…

The iron-based superconductor Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin…