Related papers: A Stepped Oxide Hetero-Material Gate Trench Power …

In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications.…

In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1-xGex body with a compositionally graded Si1-xGex…

We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabricated on AlGaO/GaO heterostructures grown by ozone MBE on…

The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been…

In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact…

We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally…

In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices…

In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…

Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…

High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…

Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI…

A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$,…

In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…

This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…

In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/…

The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the…

We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…