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Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…
Silicon is a promising anode material for next-generation lithium-ion batteries due to its exceptionally high specific capacity (3600 mAh g$^{-1}$), significantly exceeding that of conventional graphite. However, its practical application…
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic…
On-silicon inductors using a bulk 0.18 {\mu}m CMOS process have been designed. By shunting different metal layers in parallel, inductor values and quality factors were simulated. Selected inductors were then employed in two open-loop buck…
In contrast to grid-following inverters, Virtual Synchronous Generators (VSGs) perform well under weak grid conditions but may become unstable when the grid is strong. Grid strength depends on grid impedance, which unfortunately varies over…
Recent advance in nanotechnology has led to rapid advances in nanofluidics, which has been established as a reliable means for a wide variety of applications, including molecular separation, detection, crystallization and biosynthesis.…
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants…
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl.…
The need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes ({\mu}LEDs). We propose to use a SPICE…
Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the…
Solid-state nanopores have received substantial attention in the past years owing to their simplicity and potential applications expected in genomics, sensing, archival information storage, and computing. The underlying sensing technique of…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
Improving efficiency of electrical machines requires fundamental knowledge on the mechanisms behind magnetic and eddy current losses of the magnetic core materials, with Fe-Si alloy as a prototype. These losses are intrinsically influenced…
This paper proposes a novel model-free secondary voltage control (SVC) for microgrids using nonlinear multiple models adaptive control. The proposed method is comprised of two components. Firstly, a linear robust adaptive controller is…
In order to understand the physical processes of nanopore experiments at the molecular level, microscopic information from molecular dynamics is greatly needed. Coarse-grained models are a good alternative to classical all-atom models since…
We propose a new type of cryogenic current amplifiers, in which low-frequency power spectrum of current can be measured through a measurement of microwave response of a superconducting resonant circuit shunted by a series array of Josephson…
Electron beam-induced current (EBIC) imaging in the scanning transmission electron microscope (STEM), STEM-EBIC, provides direct access to carrier transport at the nanoscale. While well established in bulk SEM geometries, its application to…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…
Miniaturization of superconducting quantum interference devices (SQUIDs) is of major importance for the development of sensitive scanning nanoscale magnetometry tools. The high sensitivity of nanoSQUIDs is restricted, however, to only…