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So far transport properties of nanoscale contacts have been mostly studied within the static scattering approach. The electron dynamics and the transient behavior of current flow, however, remain poorly understood. We present a numerical…
Applying a constant voltage to superconducting nanowires we find that its IV-characteristic exhibits an unusual S-behavior. This behavior is the direct consequence of the dynamics of the superconducting condensate and of the existence of…
In the past few years, advancements in the field of nano circuit design has become tougher than the demand. Low power devices have emerged tremendously.Both voltage mode aswell as current mode devices have proven alternative to each other…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
With the further scaling of silicon MOSFETs becoming increasingly harder, the search for an alternative material became crucial. The electron device community found many of the answers in two dimensional materials, especially graphene. With…
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric…
Gas-particle flows are commonly simulated through two-fluid model at industrial-scale. However, these simulations need very fine grid to have accurate flow predictions, which is prohibitively demanding in terms of computational resources.…
Without access to the full quantum state, modeling dissipation in an open system requires approximations. The physical soundness of such approximations relies on using realistic microscopic models of dissipation that satisfy completely…
Silicon is a promising anode material for next-generation lithium-ion batteries. However, the volume change and the voltage hysteresis during lithiation and delithiation are two substantial drawbacks to their lifetime and performance. We…
We review recent advances in the DNA sequencing based on the measurement of transverse electrical currents. Device configurations proposed in the literature are classified according to whether the molecular fingerprints appear as the major…
Studying nanoscale dynamics is essential for understanding quantum materials and advancing quantum chip manufacturing. Still, it remains a major challenge to measure non-equilibrium properties such as current and dissipation, and their…
The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier…
Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus…
Effect of geometrical and structural parameters on the efficiency of the tandem solar cell based on the III-V nanowire array on silicon is studied by the means of coupled opto-electrical simulations. A close to realistic structure,…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant…
Physics based analytic equations for charge carrier profile and current density are derived by solving the carrier transport and the continuity equations for metal-intrinsic semiconductor-metal diodes. Using the analytic models a physics…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…