Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation
Mesoscale and Nanoscale Physics
2015-05-13 v1 Other Condensed Matter
Abstract
The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.
Keywords
Cite
@article{arxiv.0903.4271,
title = {Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation},
author = {Shota Ono and Hiroyuki Shima},
journal= {arXiv preprint arXiv:0903.4271},
year = {2015}
}
Comments
13 pages, 8 figures