Related papers: Analytical Drain Current Model of Nanoscale Strain…
The reduction of the thermal conductivity in nanostructures opens up the possibility of exploiting for thermoelectric purposes also materials such as silicon, which are cheap, available and sustainable but with a high thermal conductivity…
Simulating potential cascading failures can be useful for avoiding or mitigating such events. Currently, existing steady-state analysis tools are ill-suited for simulating cascading outages as they do not model frequency dependencies, they…
In the current study, model expressions for fifth-order velocity moments obtained from the truncated Gram-Charlier series expansions model for a turbulent flow field probability density function are validated using data from direct…
The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility…
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…
Turbulent flows under transcritical conditions are present in regenerative cooling systems of rocker engines and extraction processes in chemical engineering. The turbulent flows and the corresponding heat transfer phenomena in these…
Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched…
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost but good MS basis is usually very hard to obtain…
In this work, we developed an improved shear lag model to investigate the load transfer characteristics of three-phase nanocomposite which is reinforced with microscale fibers augmented with carbon nanotubes on their circumferential…
We derived the I-V characteristics of short nanowire in the circuit with and without resistive and inductive shunt. For that we used numerical calculations in the framework of time-dependent Ginzburg-Landau equations with different…
We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
A new experimental approach for the characterization of the lateral elastic modulus of individual nanowires is demonstrated by implementing a micro/nano scale diametrical compression test geometry, using a flat punch indenter inside of a…
Scanning Probe Microscopy is used to study and quantify the nanoscale electric phenomena in the two classes of oxide systems, namely transport at electroactive grain boundaries and surface behavior of ferroelectric materials. Scanning…
An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling…
We perform 3D micromagnetic simulations of current-driven magnetization dynamics in nanoscale exchange biased spin-valves that take account of (i) back action of spin-transfer torque on the pinned layer, (ii) non-linear damping and (iii)…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…