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The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become…
The i-V curve describes the current drawn from a flame as a function of the voltage difference applied across the reaction zone. Since combustion diagnostics and flame control strategies based on electric fields depend on the amount of…
A nanochannel subjected to both a potential and concentration gradient has an asymmetric current-voltage, I-V, response with three primary characteristics: the Ohmic conductance, G, the current at zero voltage, I(v=0), and the voltage at…
This paper presents a novel diffuse-interface electrochemical model that simultaneously simulates the evolution of the metallic negative electrode and interfacial voids during the stripping and plating processes in solid-state batteries.…
Next-generation lithium-ion batteries with silicon anodes have positive characteristics due to higher energy densities compared to state-of-the-art graphite anodes. However, the large volume expansion of silicon anodes can cause high…
Using both a continuum Navier-Stokes solver, with the mu(I)-flow-law implemented to model the viscous behavior, and the discrete Contact Dynamics algorithm, the discharge of granular silos is simulated in two dimensions from the early…
Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…
We calculate the current-voltage characteristic of a homogeneously strained metallic carbon nanotube adsorbed on a substrate. The strain generates a gap in the energy spectrum leading to a reduction of the current. In the elastic regime,…
Continuum simulation is employed to study ion transport and fluid flow through a nanopore in a solid-state membrane under an applied potential drop. Results show the existence of concentration polarization layers on the surfaces of the…
Broadband and low-loss superconducting switches can facilitate large-scale quantum information processors and cryogenic detectors by dynamically reconfiguring the connectivity of their circuits. The time dependent connectivity is enabled by…
We report on a theoretical derivation of the electronic dielectric response of semiconductor nanocrystals using a tight-binding framework. Extending to the nanoscale the Hanke and Sham approach [Phys. Rev. B 12, 4501 (1975)] developed for…
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET line-tunneling current increases significantly…
Besides its fundamental interest, understanding the dynamics of pair breaking in superconducting nanostructures is a central issue to optimize the performances of superconducting devices such as qubits or photon detectors. However, despite…
Record wall-plug efficiencies in long-wavelength, III-nitride light-emitting diodes (LEDs) have recently been achieved through improvements in electrical efficiency in devices containing V-defects. Numerical modeling suggests this may be…
This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed…
The power consumption of high-speed, high-resolution analog to digital converters (ADCs) is a limiting factor in implementing large-bandwidth mm-wave communication systems. A mitigating solution, which has drawn considerable recent…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…