Related papers: Realizing high current gain PNP transistors using …
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…
We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2…
Multi-junction solar cells provide a path to overcome the efficiency limits of standard silicon solar cells by harvesting more efficiently a broader range of the solar spectrum. However, Si-based multi-junction architectures are hindered by…
We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The…
We present a SNAIL-based parametric amplifier that integrates a lumped-element impedance matching network for increased bandwidth and an on-chip pump-port filter for efficient pump delivery. The amplifier is fabricated using a single-layer…
Machine learning offers promising methods for processing signals recorded with wearable devices such as surface electromyography (sEMG) and electroencephalography (EEG). However, in these applications, despite high within-session…
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on…
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding…
We present a mechanism of amplification of phonons by phonons on the basis of nonlinear band-gap transmission phenomenon. As a concept the idea may be applied to the various number of systems, however we introduce the specific idea of…
In high-performance RF transceivers the thrust of has been on lower noise LNAs and high-power high-speed PAs. The performance trade-off has forced many solutions to have the LNA and PA on a separate die compared to the rest of baseband.…
In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of…
We perform high resolution spectroscopy of $N_2^+$ emission in light filaments using a controlled pump at 795 followed by a second harmonic weak probe. Our result suggests that transient gain is achieved by resonant stimulated Raman…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
While Si clathrates have been explored as promising direct bandgap semiconductors, their practical optoelectronic performance has been limited by high doping levels and structural defects. Hydrogen has long been used to improve the…
The integration of non-terrestrial networks (NTNs), which include high altitude platform (HAP) stations and intelligent reflecting surfaces (IRS) into communication infrastructures has become a crucial area of research to address the…
Magnetic quantum sensors based on trapped ions utilize properties of quantum mechanics which have optimized precision and beat current limits in sensor technology. Trapped ions are highly sensitive in a large span of signal ranging from DC…
In this paper, we present a multiplier based on a sequence of approximated accumulations. According to a given splitting point of the carry chains, the technique herein introduced allows varying the quality of the accumulations and,…
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…