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We have employed state-of-the-art cross-correlation noise spectroscopy to study carrier dynamics in silicon heterojunction solar cells, complimented by SENTARUS simulations of the same devices. These cells were composed of a light absorbing…

Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…

We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers…

Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

Here, we report the first experimental demonstration of InN nanowire solar cells deposited by RF sputtering with a bandgap energy of 1.78 eV. By adding an amorphous Si (a-Si) buffer to the n-InN/p-Si structure, we have improved the…

Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of…

A novel topology for a high gain two-stage amplifier is proposed. The proposed circuit is designed in a way that the non-dominant pole is at output of the first stage. A positive capacitive feedback (PCF) around the second stage introduces…

In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS…

Surface plasmon resonance (SPR) has been widely utilized to improve the absorption performance in the photosensors. Graphene has emerged as a promising plasmonic material, which supports tunable SPR and shows significant flexibility over…

Surface atomic-layer (SAL) superconductors consisting of epitaxially grown metal adatoms on a clean semiconductor surface have been recently established. Compared to conventional metal thin films, they have two important features: i)…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

A small scale bipolar transistor with polysilicon emitter will, depending on the emitter window size, display suppression of the hole tramsport due to single electron effects. In this paper the resulting base current suppression is computed…

Active control over the flow of heat in the near-field holds promise for nanoscale thermal management, with applications in refrigeration, thermophotovoltaics, and thermal circuitry. Analogously to its electronic counterpart, the…

We present a concept for an ultra-thin solar fuel device with a nanostructured back contact. Using rigorous simulations we show that the nanostructuring significantly increases the absorption in the semiconductor, CuBi$_2$O$_4$ in this…

Several recent Transformer architectures expose later layers to representations computed in the earliest layers, motivated by the observation that low-level features can become harder to recover as the residual stream is repeatedly…

Tip enhanced Raman scattering (TERS) amplifies the intensity of vibrational Raman scattering by employing the tip of a probe interacting, in ultra close proximity, with a surface. Although a general understanding of the TERS process is…

A scaled trapped-ion quantum computer will require efficient fluorescence collection across a large area. Here we propose and demonstrate a compact monolithically integrated system featuring a metalens fabricated on the backside of a…