Related papers: Realizing high current gain PNP transistors using …
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison…
A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form…
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an…
Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we present four novel sense amplifier (SA) topologies based on phase transition material…
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…
We establish a new approach for pump-probe simulations of metallic metamaterials coupled to the gain materials. It is of vital importance to understand the mechanism of the coupling of metamaterials with the gain medium. Using a four-level…
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…
We show that the energy-transport efficiency in a chain of two-level emitters can be drastically enhanced by the presence of a photonic topological insulator (PTI). This is obtained by exploiting the peculiar properties of its nonreciprocal…
This letter proposes a new spoof surface plasmon transmission line (SSP-TL) using capacitor loading techniques. This new SSP-TL features flexible and reconfigurable dispersion control and highly selective filtering performance without…
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier…
A recently introduced Early modeling of transistors is applied to the study of the common collector amplifier (or emitter follower), an important type of electronic circuit typically employed as buffer, being characterized by near unit…
We investigated surface plasmon polariton (SPP) propagation in a metal-semiconductor-metal structure where semiconductor is highly excited to have optical gain. We show that near the SPP resonance, the imaginary part of the propagation…
The possibility of constructing a surface exciton polariton (SEP) based sensor at room temperature is explored. The proposed SEP sensor is based on the Kretschmann-Raether configuration of conventional surface plasmon resonance (SPR)…
Surface phonon-polaritons can carry energy on the surface of dielectric films and thus are expected to contribute to heat conduction. However, the contribution of surface phonon-polaritons (SPhPs) to thermal transport has not been…
Transformer-based approaches have revolutionized image super-resolution by modeling long-range dependencies. However, the quadratic computational complexity of vanilla self-attention mechanisms poses significant challenges, often leading to…
We demonstrate the optical absorption has been enhanced in the small molecule organic solar cells by employing trapezoid grating structure. The enhanced absorption is mainly attributed to both waveguide modes and surface plasmon modes,…
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate…
We present a study of transport in graphene devices on polar insulating substrates using a tight-binding model. The mobility is computed using a multiband Boltzmann treatment. We provide the scaling of the surface polar phonon contribution…
A parabolic trough solar collector is a dominant technology for high-temperature industrial applications, but efficient use of a conventional surface-based parabolic trough solar collector (SBPTSC) is limited by its high radiation loss due…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…