Related papers: High field transport in graphene
We study transport of two-dimensional quasi-relativistic electronic excitations in graphene in the presence of static long-range-correlated random scalar and vector potentials. Using a combination of perturbation theory and path-integral…
The performance of nanoscale electronic devices based on a two-three dimensional (2D-3D) interface is significantly affected by the electrical contacts that interconnect these materials with external circuitry. This work investigates charge…
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to…
Simulations of charge transport in graphene are presented by implementing a recent method published on the paper: V. Romano, A. Majorana, M. Coco, "DSMC method consistent with the Pauli exclusion principle and comparison with deterministic…
Two-dimensional (2D) materials such as graphene offer a variety of outstanding properties for a wide range of applications. Their transport properties in particular present a rich field of study. However, the studies of transport properties…
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and…
The nonlinear optical and optoelectronic properties of graphene with the emphasis on the processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects as well as generation of photocurrents due to coherent…
Heating of carriers in an intrinsic graphene under dc electric field is considered taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal…
Highly energetic ions traversing a two-dimensional material such as graphene produce strong electronic excitations. Electrons excited to energy states above the work function can give rise to secondary electron emission, reducing the amount…
Understanding thermal transport in 2D materials and especially in graphene is a key challenge for the design of heat management and energy conversion devices. The high sensitivity of measured transport properties to structural defects,…
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
We study the radiative heat transfer and the van der Waals friction between graphene and an amorphous SiO$_2$ substrate. We study the surface phonon-polaritons contribution to the low-field mobility as a function of temperature and of…
We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer…
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their…
Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…
Near infrared pump-probe spectroscopy has been used to measure the ultrafast dynamics of photoexcited charge carriers in monolayer and multilayer graphene. We observe two decay processes occurring on 100 fs and 2 ps timescales. The first is…
An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency…
$\beta$-Gallium Oxide (Ga$_{2}$O$_{3}$) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and RF switching. The room temperature bulk electron mobility ($\sim$200…
We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather…