Two-dimensional (2D) materials such as graphene offer a variety of outstanding properties for a wide range of applications. Their transport properties in particular present a rich field of study. However, the studies of transport properties of graphene under pressure are mostly limited to ∼1 GPa, largely due to the technical challenges and difficulties of placing graphene inside a diamond anvil cell (DAC) and maintaining good electrical contacts under pressure. We developed a novel technique allowing for direct measurements of the transport properties of high quality chemical vapor deposition (CVD) monolayer graphene under pressures. Combined Raman spectroscopic and direct resistivity measurements on pure monolayer graphene up to 40 GPa shows an effective out of plane stiffness of c33=0.26±.09.11 GPa, and observe relatively constant resistances with pressure, suggesting high pressure as a useful technique for producing large biaxial strains within graphene.
@article{arxiv.2207.14183,
title = {Pressure induced 3D strain in 2D Graphene},
author = {Nathan Dasenbrock-Gammon and Sachith Dissanayake and Ranga Dias},
journal= {arXiv preprint arXiv:2207.14183},
year = {2022}
}