Graphene under hydrostatic pressure

John E. Proctor; Eugene Gregoryanz; Konstantin S. Novoselov; Mustafa Lotya; Jonathan N. Coleman; Matthew P. Halsall

doi:10.1103/PhysRevB.80.073408

Graphene under hydrostatic pressure

Materials Science 2009-09-10 v2

Authors: John E. Proctor , Eugene Gregoryanz , Konstantin S. Novoselov , Mustafa Lotya , Jonathan N. Coleman , Matthew P. Halsall

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Abstract

In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behaviour as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa, and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic bandstructure.

Keywords

graphene epitaxial graphene graphene physics

Cite

@article{arxiv.0905.3103,
  title  = {Graphene under hydrostatic pressure},
  author = {John E. Proctor and Eugene Gregoryanz and Konstantin S. Novoselov and Mustafa Lotya and Jonathan N. Coleman and Matthew P. Halsall},
  journal= {arXiv preprint arXiv:0905.3103},
  year   = {2009}
}

Comments

Accepted in Physical Review B with minor changes

Graphene under hydrostatic pressure

Abstract

Keywords

Cite

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