Characterization of electronic structure of periodically strained graphene
Abstract
We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. We measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.
Keywords
Cite
@article{arxiv.1511.01921,
title = {Characterization of electronic structure of periodically strained graphene},
author = {Marjan Aslani and C. Michael Garner and Suhas Kumar and Dennis Nordlund and Piero Pianetta and Yoshio Nishi},
journal= {arXiv preprint arXiv:1511.01921},
year = {2015}
}