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We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…

Mesoscale and Nanoscale Physics · Physics 2015-03-17 Oleg V. Yazyev , Joel E. Moore , Steven G. Louie

The interplay between magnetism and strong topological insulator gives rise to distinct new topological phases and various intriguing phenomena, attracting significant attention in recent years. However, magnetic effects in weak topological…

Mesoscale and Nanoscale Physics · Physics 2024-09-05 Rui Chen , Xiao-Xia Yi , Bin Zhou , Dong-Hui Xu

Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the…

Materials Science · Physics 2015-10-08 Maryam Salehi , Matthew Brahlek , Nikesh Koirala , Jisoo Moon , Liang Wu , N. P. Armitage , Seongshik Oh

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…

The protected surface states of topological insulators (TIs) form gapless Dirac cones corresponding non-degenerate eigenstates with helical spin polarisation. The presence of a warping term deforms the isotropic cone of the most simple…

Materials Science · Physics 2020-07-02 Peter Thalmeier , Alireza Akbari

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect,…

Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is…

Mesoscale and Nanoscale Physics · Physics 2017-08-17 Weizhe Edward Liu , Ewelina M. Hankiewicz , Dimitrie Culcer

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…

Mesoscale and Nanoscale Physics · Physics 2018-04-11 R. M. Ireland , Liang Wu , M. Salehi , S. Oh , N. P. Armitage , H. E. Katz

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers,…

We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device…

Materials Science · Physics 2016-12-21 I. S. S. de Oliveira , W. L. Scopel , R. H. Miwa

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new…

Mesoscale and Nanoscale Physics · Physics 2019-07-03 Pan He , Steven S. -L. Zhang , Dapeng Zhu , Shuyuan Shi , Olle G. Heinonen , Giovanni Vignale , Hyunsoo Yang

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness.…

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

Materials Science · Physics 2015-06-23 J. Barzola-Quiquia , T. Lehmann , M. Stiller , D. Spemann , P. Esquinazi , P. Häussler

We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at…

Mesoscale and Nanoscale Physics · Physics 2020-06-30 Anand Nivedan , Kamal Das , Sandeep Kumar , Arvind Singh , Sougata Mardanya , Amit Agarwal , Sunil Kumar

The massless Dirac electrons found at topological insulator surfaces are thought to be influenced very little by weak, non-magnetic disorder. However, a resonance effect of strongly perturbing non-magnetic impurities has been theoretically…

Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields…

Materials Science · Physics 2021-01-04 X. Lei , L. Zhou , Z. Y. Hao , X. Z. Ma , C. Ma , Y. Q. Wang , P. B. Chen , B. C. Ye , L. Wang , F. Ye , J. N. Wang , J. W. Mei , H. T. He

The zero gap surface states of a 3D-topological insulator host highly mobile Dirac fermions with spin locked to the momentum. The high mobility attributed to absence of back scattering is reduced in presence of impurities on the surface. In…

Mesoscale and Nanoscale Physics · Physics 2015-05-20 Parijat Sengupta , Enrico Bellotti

Quantum transport phenomena in two-dimensional electron gases (2DEGs) at oxide interfaces have garnered significant interest owing to their potential in spintronic and quantum information technologies. Here, we systematically investigate…

Strongly Correlated Electrons · Physics 2025-11-14 Hui Zhang , Daming Tian , Xiaobing Chen , Lu Chen , Min Li , Yetong Bai , Fengxia Hu , Baogen Shen , Jirong Sun , Weisheng Zhao