An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a {\pi}/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of {\pi}/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
@article{arxiv.1906.06462,
title = {Nonlinear planar Hall effect},
author = {Pan He and Steven S. -L. Zhang and Dapeng Zhu and Shuyuan Shi and Olle G. Heinonen and Giovanni Vignale and Hyunsoo Yang},
journal= {arXiv preprint arXiv:1906.06462},
year = {2019}
}