Related papers: Proposal of a spin torque majority gate logic
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…
The need for low power alternatives to digital electronic circuits has led to increasing interest in logic devices where information is stored in nanomagnets. This includes both nanomagnetic logic (NML) where information is communicated…
We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
Reversible logic has come to the forefront of theoretical and applied research today. Although many researchers are investigating techniques to synthesize reversible combinational logic, there is little work in the area of sequential…
This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel…
We propose a novel spin-orbit torque (SOT) driven and voltage-gated domain wall motion (DWM)-based MTJ device and its application in neuromorphic computing. We show that by utilizing the voltage-controlled gating effect on the DWM, the…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
Recent progress in all-electrical nucleation, detection and manipulation of magnetic skyrmions has unlocked the tremendous potential of skyrmion-based spintronic devices. Here, we show via micromagnetic simulations that the stable magnetic…
Wave-based data processing by spin waves and their quanta, magnons, is a promising technique to overcome the challenges which CMOS-based logic networks are facing nowadays. The advantage of these quasi-particles lies in their potential for…
In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves…