Related papers: Proposal of a spin torque majority gate logic
While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of different spintronic logic approaches, which use magnetic…
Circuit obfuscation is a frequently used approach to conceal logic functionalities in order to prevent reverse engineering attacks on fabricated chips. Efficient obfuscation implementations are expected with lower design complexity and…
Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with…
A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…
Having multi-output logic gates saves much energy because the same structure can be used to feed multiple inputs of next stage gates simultaneously. This paper proposes novel triangle shape fanout of 2 spin wave Majority and XOR gates; the…
In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
While Spin Waves (SW) interaction provides natural support for low power Majority (MAJ) gate implementations many hurdles still exists on the road towards the realization of practically relevant SW circuits. In this paper we leave the SW…
By its very nature, Spin Wave (SW) interference provides intrinsic support for Majority logic function evaluation. Due to this and the fact that the $3$-input Majority (MAJ3) gate and the Inverter constitute a universal Boolean logic gate…
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…
Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of…
Magnetic skyrmions are promising candidates as elementary nanoscale bits in logic-in-memory devices, intrinsically merging high density memory and computing capabilities. Here we exploit the dynamics of skyrmions interacting with anisotropy…