Related papers: Proposal of a spin torque majority gate logic
This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin…
Nanomechanical systems have been proposed as an alternative computing platform for high radiation environments, where semiconductor electronics traditionally fail, as well as to allow improved gate densities and energy consumption. While…
Now a day reversible logic is an attractive research area due to its low power consumption in the area of VLSI circuit design. The reversible logic gate is utilized to optimize power consumption by a feature of retrieving input logic from…
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…
The end of Moore's law for CMOS technology has prompted the search for low-power computing alternatives, resulting in several promising proposals based on magnetic logic[1-8]. One approach aims at tailoring arrays of nanomagnetic islands in…
Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…
With phenomenal growth of high speed and complex computing applications, the design of low power and high speed logic circuits have created tremendous interest. Conventional computing devices are based on irreversible logic and further…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…
Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
We show how the interference between superfluid spin currents can endow spin circuits with coherent logic functionality. While the hydrodynamic aspects of the linear-response collective spin transport obviate interference features, we focus…
One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…
One of the most interesting and still growing scientific fields is neuromorphic engineering, which is focused on studying and designing hardware and software with the purpose of mimicking the basic principles of biological nervous systems.…
Due to their very nature, Spin Waves (SWs) created in the same waveguide, but with different frequencies, can coexist while selectively interacting with their own species only. The absence of inter-frequency interferences isolates input…
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…
Reliable and energy efficient magnetization switching by electrically-induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
Dream of developing molecule-based logic and memory device is more than 70-year-old. Presently, molecule-based devices are also considered for quantum computation hardware. The recent studies have shown the molecule connected to metal leads…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…