Related papers: Proposal of a spin torque majority gate logic
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…
We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First we show that a mechanism in which spin valve performance at finite…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…
The spin-transfer torque is a fundamental physical quantity to operate the spintronics devices such as racetrack memory. We theoretically study the spin-transfer torque and analyze the dynamics of the magnetic domain walls in magnetic Weyl…
The topologically protected magnetic spin configurations known as skyrmions offer promising applications due to their stability, mobility and localization. In this work, we emphasize how to leverage the thermally driven dynamics of an…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…
We present a feasibility study of logic circuits utilizing spin waves for information transmission and processing. As an alternative approach to the transistor-based architecture, logic circuits with spin wave bus do not use charge as an…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
In nanoelectronic circuit synthesis, the majority gate and the inverter form the basic combinational logic primitives. This paper deduces the mathematical formulae to estimate the logical masking capability of majority gates, which are used…
We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical…
We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…
We examine spin dependent transport in a quantum interferometer composed of magnetic atomic sites based on transfer matrix formalism. The interferometer, threaded by a magnetic flux $\phi$, is symmetrically attached to two semi-infinite…
Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport.…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…