Related papers: Multi-mode Fabry-P\'erot conductance oscillations …
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
We investigate the steady-state electronic transport through a suspended dimer molecule coupled to leads. When strongly coupled to a vibrational mode, the electron transport is enhanced at the phonon resonant frequency and higher-order…
A direct signature of electron transport at the metallic surface of a topological insulator is the Aharonov-Bohm oscillation observed in a recent study of Bi_2Se_3 nanowires [Peng et al., Nature Mater. 9, 225 (2010)] where conductance was…
We consider electronic transport through a suspended voltage-biased nanowire. By coupling the tunneling current to a transverse magnetic field, vibrational modes of the wire are excited which influences the current-voltage characteristics…
We present an electron interferometer defined purely by electrostatic gating in encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device…
Magnetoresistance oscillations were observed on networks of superconducting ultrathin Nb nanowires presenting evidences of either thermal or quantum activated phase slips. The magnetic transport data, discussed in the framework of different…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…
We study electron transport through a domain wall in a ferromagnetic nanowire subject to spin-dependent scattering. A scattering matrix formalism is developed to address both coherent and incoherent transport properties. The coherent case…
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in…
At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent…
Some of the most sensitive and precise measurements to date are based on matterwave interferometry with freely falling atomic clouds. Examples include high-precision measurements of inertia, gravity and rotation. In order to achieve these…
Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy…
We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free…
We report a robust fabrication method for patterning free-standing Pt nanowires for the use as thermal anemometry probes for small-scale turbulence measurements. Using e-beam lithography, high aspect ratio Pt nanowires (~300 nm width, ~70…
We present low-temperature magnetotransport measurements on selectively-grown Sb$_2$Te$_3$-based topological insulator ring structures. These topological insulator ring geometries display clear Aharonov-Bohm oscillations in the conductance…
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…
Epitaxially grown InAs NWs are relevant for electrical sensing applications due to Fermi level pinning at NW surface, thus very sensitive to surrounding environment. While a single NW growth batch consists of millions virtually identical…
We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe…