Related papers: Multi-mode Fabry-P\'erot conductance oscillations …
We present an extensive experimental and theoretical study of the proximity effect in InAs nanowires connected to superconducting electrodes. We fabricate and investigate devices with suspended gate-controlled nanowires and nonsuspended…
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and…
Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates,…
We investigate a non-equilibrium aspect of the current-driven superconducting-normal phase transition in floating Al islands of epitaxial full-shell Al/InAs nanowires. Within a transition region discontinuous voltage jumps and hysteretic…
Recent experiments on amorphous materials have established the existence of surface states similar to those of crystalline three-dimensional topological insulators (TIs). Amorphous topological insulators are also independently of interest…
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra…
One of the unique features of Dirac Fermions is pseudo-diffusive transport by evanescent modes at low Fermi energies when the disorder is low. At higher Fermi energies i.e. carrier densities, the electrical transport is diffusive in nature…
We study the conductance $G$ of 2D Dirac semimetal nanowires at the presence of disorder. For an even nanowire length $L$ determined by the number of unit cells, we find non-integer values for $G$ that are independent of $L$ and persist…
We present a first-principles calculation of the electronic conduction properties of single-row sodium nanowires suspended between semi-infinite electrodes. The conductance of the nanowire is ~1 G0 (=2e^2/h) and oscillates with a two-atom…
Quantum coherent transport of Dirac fermions in a mesoscopic nanowire of the 3D topological insulator Bi2Se3 is studied in the weak-disorder limit. At very low temperatures, many harmonics are evidenced in the Fourier transform of…
Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental…
We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them…
We study proximity-induced superconductivity in gold nanowires as a function of the length of the nanowire, magnetic field, and excitation current. Short nanowires exhibit a sharp superconducting transition, whereas long nanowires show…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb…
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…
The growing need for smaller electronic components has recently sparked the interest in the breakdown of the classical conductivity theory near the atomic scale, at which quantum effects should dominate. In 2012, experimental measurements…