We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electron passing the barrier depends exponentially on the transport length with a mean free path of 200 - 260 nm and reaches ballistic transport regime for the shortest devices with 70 % of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.
@article{arxiv.2403.06630,
title = {Hot Carrier Nanowire Transistors at the Ballistic Limit},
author = {M. Kumar and A. Nowzari and A. R. Persson and S. Jeppesen and A. Wacker and G. Bastard and R. Wallenberg and F. Capasso and V. F. Maisi and L. Samuelson},
journal= {arXiv preprint arXiv:2403.06630},
year = {2024}
}