Related papers: Simulation of hydrogenated graphene Field-Effect T…
We introduce effective field theories for the electronic properties of graphene in terms of relativistic fermions propagating in 2+1 dimensions, and outline how strong inter-electron interactions may be modelled by numerical simulation of a…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical works proposed the possibility of creating large-area…
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We…
The experimental demonstration of pseudo-magnetic fields exceeding 300 T in graphene [2] nanobubbles represents considerable challenge for the present theory connecting the emergence of gauge fields due to strain in the underlying lattice.…
Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along…
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and…
In the effective mass approximation, electronic property in graphene can be characterized by the relativistic Dirac equation. Within such a continuum model we investigate the electronic transport through graphene waveguides formed by…
Graphene, a 2-dimensional monolayer form of sp2 hybridizated carbon atoms, is attracting increasing attention due to its unique and superior physicochemical properties. Covalently functionalized graphene layers, with their modifiable…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and…
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities…
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the…
Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…
In this paper the results of numerical simulation of monolayer graphene in external magnetic field are presented. The numerical simulation is performed in the effective lattice field theory with noncompact $3 + 1$-dimensional Abelian…