Related papers: Analytic model for the surface potential and drain…
In the micro- and nanoscale ferroelectric samples, the formation and the growth of domains are the usual stages of the polarization switching mechanism. By assuming the weak polarization anisotropy and by solving the…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to…
We propose an energy-based framework to analyze the statics and dynamics of a ferroelectric negative capacitance-hybrid Microelectromechanical System (MEMS) actuator. A mapping function that relates the charge on the ferroelectric to…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of…
Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…
Recently, a surface superconductor-insulator transition has been predicted for a bulk superconductor in an electric field applied perpendicular to its surface. The related calculations were performed within a one-dimensional Hubbard model…
In this paper, two dimensional modulation of the potential in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors due to the specific microstructure at the interface is used to…
Various models leading to predictions of negative capacitance, C, are briefly reviewed. Their relation to the nature of electric control is discussed. We reconfirm that the calculated double layer capacitance can be negative under S-control…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
Numerous proposed and developed superconducting fault current limiters and self-limiting transformers limit successfully fault currents but do not provide uninterrupted supplying of consumers. A design investigated in the work combines the…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a…
The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…