Related papers: Tunneling Spin Injection into Single Layer Graphen…

We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to…

The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and…

A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…

Heterostructures combining graphene with 3d transition metal ferromagnets (FMs) enable various spin-based phenomena at ultrafast timescales. However, challenges such as the interfacial impedance mismatch, FM deposition-induced defect…

Using scanning tunneling microscopy (STM) in ultra high vacuum and atomic force microscopy, we investigate the corrugation of graphene flakes deposited by exfoliation on a Si/SiO2 (300 nm) surface. While the corrugation on SiO2 is…

We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous…

Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…

We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples…

Transport measurements on few layer graphene (FLG) are important as they interpolate between the properties of single layer graphene (SLG) as a true 2-dimensional material and the 3-dimensional bulk properties of graphite. In this article…

We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown…

We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs…

We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lower…

Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the…

We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is…

Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…

This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique…

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by…

We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both…

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and…

We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5 \mu m in single layer graphene non-local spin transport devices at room temperature. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO$_2$…