Related papers: AlGaAs/GaAs single electron transistors fabricated…
We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…
We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V…
We study low-temperature transport through a Coulomb blockaded quantum dot (QD) contacted by a normal (N), and a superconducting (S) electrode. Within an effective cotunneling model the conduction electron self energy is calculated to…
We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons. A narrow spin excitation peak is observed and assigned to the intershell triplet-to-singlet…
Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot…
We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
Coherent electronic transport in single-molecule junctions is investigated in the Coulomb blockade regime. Both the transmission phase and probability are calculated for junctions with various contact symmetries. A dramatic suppression of…
The conductance in Coulomb blockade quantum dots exhibits sharp peaks whose spacings fluctuate with the number of electrons. We derive the temperature-dependence of these fluctuations in the statistical regime and compare with recent…
We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
Transport through two quantum dots laterally embedded in Aharonov-Bohm interferometry with infinite intradot and arbitrary interdot Coulomb repulsion is analyzed in the weak coupling and Coulomb blockade regime. By employing the modified…
We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…
We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded…
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we…
We investigate the nonlinear regime of charge and energy transport through Coulomb-blockaded quantum dots. We discuss crossed effects that arise when electrons move in response to thermal gradients (Seebeck effect) or energy flows in…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…