Related papers: AlGaAs/GaAs single electron transistors fabricated…
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
Three types of metallic nanostructures comprising niobium were investigated experimentally; in all three types, electric transport at very low temperatures was governed by Coulomb blockade effects. 1. Thin film strips of niobium could be…
We study the low temperature electrical transport behaviour of a silicon single electron transistor. The island and leads are defined by patterned phosphorus doped regions achieved by ion implantation through a polymer resist mask. In the…
Tunneling of electrons traversing a few-electron quantum dot is strongly influenced by the Coulomb interaction leading to Coulomb blockade effects and single-electron tunneling. We present calculations which demonstrate that correlations…
We report anomalous critical transport behavior in a GaAs structure containing a dense array of ErAs quantum dots. The structure displays a voltage (electric field)-controlled insulator-to-metal transition and strong hysteresis in the…
The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to…
Equilibrium properties of electrons in double-heterojunction AlGaAs/GaAs\AlGaAs structures are investigated theoretically, using a full self-consistent numerical method. The transition from single to bilayer electron systems is discussed…
While Single Molecule Transistors have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated. We have used the technique of electromigration to…
The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot…
The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown…
We study low-temperature transport through carbon nanotube quantum dots in the Coulomb blockade regime coupled to niobium-based superconducting leads. We observe pronounced conductance peaks at finite source-drain bias, which we ascribe to…
Inelastic tunneling of electrons can generate the emission of photons with energies intuitively limited by the applied bias voltage. However, experiments indicate that more complex processes involving the interaction of electrons with…
Cotunneling transport through quantum dots weakly coupled to non-collinearly magnetized leads is analyzed theoretically by means of the real-time diagrammatic technique. The electric current, dot occupations, and dot spin are calculated in…
Heat transfer mediated by the Coulomb interaction reveals unconventional thermodynamic behavior and broadens thermodynamics research into fields such as quantum dynamics and information engineering. Although some experimental demonstrations…
We create laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron systems (2DES). Electrons tunnel into these dots across an AlGaAs tunnel barrier from a single $n+$…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs…
We study the transport properties of a quantum dot (QD) with highly resistive gate electrodes, and show that the QD displays a quantum phase transition analogous to the famous dissipative phase transition first identified by S. Chakravarty…