Related papers: AlGaAs/GaAs single electron transistors fabricated…
Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent…
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic…
Manifestations of quantum coherence in the electronic conductance through nearly closed quantum dots in the Coulomb blockade regime are addressed. We show that quantum coherent tunneling processes explain some puzzling statistical features…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We analyze the heat current flowing across interacting quantum dots within the Coulomb blockade regime. Power can be generated by either voltage or temperature biases. In the former case, we find nonlinear contributions to the Peltier…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length…
We provide a physical analysis of the charging and detection of the first few electrons in a laterally-coupled GaAs/AlGaAs quantum dot (LCQD) circuit with integrated quantum point contact (QPC) read-out. Our analysis is based on the…
We study conductance through a quantum dot under Coulomb blockade conditions in the presence of an external periodic perturbation. The stationary state is determined by the balance between the heating of the dot electrons by the…
We explore electron transport through a quantum dot coupled to the source and drain charge reservoirs We trace the transition from the Coulomb blockade regime to Kondo regime in the electron transport through the dot occuring when we…
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…
We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at…
We study electron transport through a quantum dot in a Tomonaga-Luttinger liquid with an inhomogeneity induced either by a non-uniform electron interaction or by the presence of tunnel resistances of contacts. The non-analytic temperature…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could…
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission,…