Related papers: Charge Sensing in Intrinsic Silicon Quantum Dots
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
Single-shot measurement of the charge arrangement and spin state of a double quantum dot are reported, with measurement times down to ~ 100 ns. Sensing uses radio-frequency reflectometry of a proximal quantum dot in the Coulomb blockade…
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will…
We report here on a direct and non-invasive measurement of the charge and its distribution in a Kondo correlated quantum dot (QD). A non-invasive potential-sensitive detector in proximity with the QD reveals that even though the conductance…
We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…
Detection of moving charge in free space is presented in the framework of single electron CMOS devices. It opens the perspective for construction of new type detectors for beam diagnostic in accelerators or for the detection of solar wind.…
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon…
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off…
It is known that a quantum computer operating on electron-spin qubits with single-electron Hamiltonians and assisted by single-spin measurements can be simulated efficiently on a classical computer. We show that the exponential speed-up of…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…
We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate…