Related papers: Charge Sensing in Intrinsic Silicon Quantum Dots
Low-capacitance Josephson junction systems as well as coupled quantum dots, in a parameter range where single charges can be controlled, provide physical realizations of quantum bits, discussed in connection with quantum computing. The…
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting…
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth…
We report here direct measurements of the destruction of charge quantization in a single electron box, the first over the full range of box-to-lead conductance values from G ~ 0 to the conductance quantum G_q = 2e^2/h, using a sensitive…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence…
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot…
We present a thermometry scheme to extract the temperature of a 2DEG by monitoring the charge occupation of a weakly tunnel-coupled 'thermometer' quantum dot using a quantum point contact detector. Electronic temperatures between 97 mK and…
We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots.…
We demonstrate high speed manipulation of a few-electron double quantum dot. In the one-electron regime, the double dot forms a charge qubit. Microwaves are used drive transitions between the (1,0) and (0,1) charge states of the double dot.…
Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges.…
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…