Related papers: Analysis of the two dimensional Datta-Das Spin Fie…
Controlling the flow of electrons by manipulation of their spin is a key to the development of spin-based electronics. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at…
Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron as well as the hybridization of two-electron spin states. In this paper,…
We propose a scheme for electrical measurement of two-electron spin states in a semiconductor double quantum dot. We calculated the adiabatic charge transfer when surface gates are modulated in time. Because of spin-orbit coupling in the…
Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
We study spin precession due to Rashba spin splitting of electrons and holes in semiconductor quantum wells. Based on a simple analytical expression that we derive for the current modulation in a broad class of experimental situations of…
A numerically exact calculation of the T=0 transport properties of a quantum wire interacting with a lateral two-level quantum dot is presented. The wire conductance is calculated for all different states of charge and spin of the quantum…
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The…
We discuss the physics of a of a spin-1 quantum dot, coupled to two metallic leads and develop a simple model for the temperature dependence of its conductance. Such quantum dots are described by a two-channel Kondo model with asymmetric…
We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…
The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
We investigate the spin dynamics and relaxation in remotely-doped two dimensional electron systems where the dopants lead to random fluctuations of the Rashba spin-orbit coupling. Due to the resulting random spin precession, the spin…
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction…
Superconductor-ferromagnet tunnel junctions demonstrate giant thermoelectric effects which are being exploited to engineer ultra-sensitive terahertz radiation detectors. Here, we experimentally observe the recently predicted complete…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
A Datta-Das spin field-effect transistor is built of a heterostructure with a Rashba spin-orbit interaction (SOI) at the interface (or quantum well) separating two possibly magnetized reservoirs. The particle and spin currents between the…