Related papers: Analysis of the two dimensional Datta-Das Spin Fie…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
There is significant current interest in spintronic devices fashioned after a spin analog of the electro-optic modulator proposed by Datta and Das [Appl. Phys. Lett., \underline{56}, 665 (1990)]. In their modulator, the ``modulation'' of…
In many systems, planar Hall effect wherein transverse signal appears in response to longitudinal stimulus is rooted in spin-orbit coupling. A spin transistor put forward by Datta and Das on the other hand consists of ferromagnetic leads…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
The charge and spin Hall conductance of the two-dimensional hole gas within the Luttinger model with and without inversion symmetry breaking terms in a perpendicular magnetic field are studied, and two key phenomena are predicted. The sign…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this…
In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…
The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky…
We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate…
The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…
We analyze spin-dependent transport through spin valves composed of an interacting quantum dot coupled to two ferromagnetic leads. The spin on the quantum dot and the linear conductance as a function of the relative angle $\theta$ of the…
Two-dimensional triangular-lattice antiferromagnets are predicted under some conditions to exhibit a quantum spin liquid ground state whose low-energy behavior is described by a spinon Fermi surface. Directly imaging the resulting spinons,…