Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators
Strongly Correlated Electrons
2007-10-19 v1
Abstract
The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.
Keywords
Cite
@article{arxiv.0710.3533,
title = {Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators},
author = {Kenji Yonemitsu},
journal= {arXiv preprint arXiv:0710.3533},
year = {2007}
}
Comments
6 pages, 4 figures