Related papers: Gate-defined graphene double quantum dot and excit…
We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We investigate the electrostatic confinement of charge carriers in a gapped graphene quantum dot in the presence of a magnetic flux. The circular quantum dot is defined by an electrostatic gate potential delimited in an infinite graphene…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We present a simple technique to fabricate graphene quantum dots in a cryostat. It relies upon the controlled rupture of a suspended graphene sheet subjected to the application of a large electron current. This results in the in-situ…
We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube…
We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field.…
The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…
We study the ground-state properties of a double layer graphene system with the Coulomb interlayer electron-electron interaction modeled within the random phase approximation. We first obtain an expression of the quantum capacitance of a…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include…
We report low-temperature transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography. The excellent spatial resolution of the atomic force microscope allows us to reliably fabricate quantum dots…
Nanoelectronic quantum dot devices exploiting the charge-Kondo paradigm have been established as versatile and accurate analog quantum simulators of fundamental quantum impurity models. In particular, hybrid metal-semiconductor dots…
A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an…
We report the experimental realization of double quantum dots in single-walled carbon nanotubes. The device consists of a nanotube with source and drain contact, and three additional top-gate electrodes in between. We show that, by…
We consider a square lattice configuration of circular gate-defined quantum dots in an unbiased graphene sheet and calculate the electronic, particularly spectral properties of finite albeit actual sample sized systems by means of a…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant…
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…