We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the characteristic resonance state in the conduction band, revealing a giant carrier-dependent energetic renormalization up to 350 meV with respect to the Dirac point, accompanied by the observation of long-range screening effects. Joint density functional theory and tight-binding calculations with modified perturbation potential corroborate experimental findings and highlight the short-range character of N-induced perturbation.
@article{arxiv.2111.09149,
title = {Gate-tunable artificial nucleus in graphene},
author = {Mykola Telychko and Keian Noori and Hillol Biswas and Dikshant Dulal and Pin Lyu and Jing Li and Hsin-Zon Tsai and Hanyan Fang and Zhizhan Qiu and Zhun Wai Yap and Kenji Watanabe and Takashi Taniguchi and Michael F. Crommie and Aleksandr Rodin and Jiong Lu},
journal= {arXiv preprint arXiv:2111.09149},
year = {2021}
}