We investigate electronic transport in the nitrogen-doped graphene containing different configurations of point defects: singly or doubly substituting N atoms and nitrogen-vacancy complexes. The results are numerically obtained using the quantum-mechanical Kubo-Greenwood formalism. Nitrogen substitutions in graphene lattice are modelled by the scattering potential adopted from the independent self-consistent ab initio calculations. Variety of quantitative and qualitative changes in the conductivity behaviour are revealed for both graphite- and pyridine-type N defects in graphene. For the most common graphite-like configurations in the N-doped graphene, we also consider cases of correlation and ordering of substitutional N atoms. The conductivity is found to be enhanced up to several times for correlated N dopants and tens times for ordered ones as compared to the cases of their random distributions. The presence of vacancies in the complex defects as well as ordering of N dopants suppresses the electron-hole asymmetry of the conductivity in graphene.
@article{arxiv.1405.7128,
title = {Effects of nitrogen-doping configurations with vacancies on conductivity in graphene},
author = {T. M. Radchenko and V. A. Tatarenko and I. Yu. Sagalianov and Yu. I. Prylutskyy},
journal= {arXiv preprint arXiv:1405.7128},
year = {2014}
}