Related papers: Photovoltaic effect for narrow-gap Mott insulators
We theoretically study pump-photon-energy-dependent pathways of a photoinduced dimer-Mott-insulator-to-metal transition, on the basis of numerical solutions to the time-dependent Schr\"odinger equation for the exact many-body wave function…
The shift current photovoltaic effect is conventionally understood as the real-space displacement of a wave packet induced by photoexcitation. However, this interpretation becomes insufficient in flat-band systems, where quasiparticles are…
The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential mu abruptly jumps by ~ 0.07 eV…
We use time- and energy-resolved optical spectroscopy to investigate the coupling of electron-hole excitations to the magnetic environment in the relativistic Mott insulator Na$_2$IrO$_3$. We show that, on the picosecond timescale, the…
We compute the time-resolved photoemission spectrum after photo-doping in a two-dimensional Mott-Hubbard insulator. We find that the relaxation rate of high-energy photo-doped electrons in the paramagnetic phase scales with the strength of…
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…
We investigate quantum photovoltaic effect in double quantum dots by applying nonequilibrium quantum master equation. The drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to the large…
The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative…
Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by…
We study photoinduced optical responses of one-dimensional strongly correlated electron systems. The optical conductivity spectra are calculated for the ground state and a photoexcited state in the one-dimensional Hubbard model at half…
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage…
We present comparative theoretical investigation of thermoelectric power and Hall effect in the Hubbard model for correlated metal and Mott insulator (considered as prototype cuprate superconductor) for different concentrations of current…
The photoexcitation of a Mott insulator on a square lattice weakens the intensity of both single- and two-magnon excitations as observed in time-resolved resonant-inelastic X-ray scattering and time-resolved Raman scattering, respectively.…
Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…
The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…
We investigate how fast and how effective photocarrier excitation can modify the exchange interaction $J_\mathrm{ex}$ in the prototype Mott-Hubbard insulator. We demonstrate an ultrafast quenching of $J_\mathrm{ex}$ both by evaluating…
Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…
We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces…
We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…
This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…