English
Related papers

Related papers: Photovoltaic effect for narrow-gap Mott insulators

200 papers

We study a simple model of photovoltaic energy harvesting across a Mott insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. Upon driving the layer with a time periodic…

Strongly Correlated Electrons · Physics 2018-03-14 Max E. Sorantin , Antonius Dorda , Karsten Held , Enrico Arrigoni

We study the influence of the pulse energy and fluence on the thermalization of photo-doped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to…

Strongly Correlated Electrons · Physics 2014-12-09 Philipp Werner , Karsten Held , Martin Eckstein

We study the nonequilibrium dynamics of photoexcited electrons in the narrow-gap Mott insulator VO$_2$. The initial stages of relaxation are treated using a quantum Boltzmann equation methodology, which reveals a rapid ($\sim$ femtosecond…

Strongly Correlated Electrons · Physics 2016-03-23 Zhuoran He , Andrew J. Millis

Photovoltaic effect of double quantum dots under nonuniform light field intensity has been studied theoretically. Comparing with the traditional p-n type photovoltaic effect, the inhomogeneous light field provides asymmetric potential…

Mesoscale and Nanoscale Physics · Physics 2022-05-23 Wenxi Lai

We investigate the effect of nonlocal interactions on the photo-doped Mott insulating state of the two-dimensional Hubbard model using a nonequilibrium generalization of the dynamical cluster approximation. In particular, we compare the…

Strongly Correlated Electrons · Physics 2020-02-26 Nikolaj Bittner , Denis Golez , Martin Eckstein , Philipp Werner

We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of…

Strongly Correlated Electrons · Physics 2009-11-11 Ting-Pong Choy , Philip Phillips

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

Strongly Correlated Electrons · Physics 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

To study excitonic effects on high-harmonic generation (HHG) in Mott insulators, we investigate pumped nonequilibrium dynamics in the one-dimensional extended Hubbard model. By employing time-dependent calculations based on the exact…

Strongly Correlated Electrons · Physics 2022-06-14 Mina Udono , Koudai Sugimoto , Tatsuya Kaneko , Yukinori Ohta

We theoretically investigate pump-probe optical responses in the two-dimensional extended Hubbard model describing cuprates by using a time-dependent Lanczos method. At half filling, pumping generates photoinduced absorptions inside the…

Strongly Correlated Electrons · Physics 2017-11-23 Kazuya Shinjo , Takami Tohyama

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

Strongly Correlated Electrons · Physics 2015-08-20 Masanori Kohno

We investigate the photocurrent and spectral features in a simplified model of a Mott photovoltaic system consisting of a multilayered insulating heterostructure. The central correlated region is coupled to two metallic leads kept at…

Strongly Correlated Electrons · Physics 2024-07-17 Paolo Gazzaneo , Daniel Werner , Tommaso Maria Mazzocchi , Enrico Arrigoni

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…

Mesoscale and Nanoscale Physics · Physics 2014-06-24 Surajit Sutar , Pratik Agnihotri , Everett Comfort , T. Taniguchi , K. Watanabe , Ji Ung Lee

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

Strongly Correlated Electrons · Physics 2020-01-29 Yu-Liang Liu

We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon…

Strongly Correlated Electrons · Physics 2013-03-21 Martin Eckstein , Philipp Werner

We investigate changes in the optical conductivity of doped Mott insulators by tuning ultrashort pump pulses to target either the Drude or low-energy absorption regions. Using a hole-doped two-leg Hubbard ladder and a four-leg t-J ladders,…

Strongly Correlated Electrons · Physics 2026-01-19 Sumal Chandra , Kazuya Shinjo , Shigetoshi Sota , Seiji Yunoki , Takami Tohyama

The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN…

Mesoscale and Nanoscale Physics · Physics 2014-09-24 Michele Buscema , Dirk J. Groenendijk , Gary A. Steele , Herre S. J. van der Zant , Andres Castellanos-Gomez

We propose a multielectron approach to calculate superexchange interaction in magnetic Mott- Hubbard insulator La2CuO4(further La214) that allows to obtain the effect of optical pumping on the superexchange interaction. We use the cell…

Strongly Correlated Electrons · Physics 2017-04-26 Vladimir A. Gavrichkov , Semen I. Polukeev , Sergey G. Ovchinnikov

We analyze the effect of acoustic phonons on the photocurrent and the spectral characteristics of a simplified photovoltaic setup made of Mott insulating layers between two metallic leads among which a bias voltage is applied. We include…

Strongly Correlated Electrons · Physics 2024-09-12 Paolo Gazzaneo , Enrico Arrigoni

We use nonequilibrium dynamical mean-field theory in combination with a recently implemented strong-coupling impurity solver to investigate the relaxation of a Mott insulator after a laser excitation with frequency comparable to the Hubbard…

Strongly Correlated Electrons · Physics 2013-05-29 Martin Eckstein , Philipp Werner

The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…

Strongly Correlated Electrons · Physics 2013-10-09 M. Charlebois , S. R. Hassan , R. Karan , D. Sénéchal , A. -M. S. Tremblay
‹ Prev 1 2 3 10 Next ›