Related papers: Development and operation of research-scale III-V …
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch…
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered…
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500…
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family…
Understanding heat transfer characteristics of phase change and enhancing thermal energy transport in nanoscale are of great interest in both theoretical and practical applications. In the present study, we investigated the nanoscale…
We develop an ultra-high-temperature vacuum probe station (UHT-VPS) featuring a sample holder heated by thermal radiation from a silicon carbide heater. This contactless configuration electrically isolates the sample from the high-power…
The advancement of quantum technology networks necessitates high-speed, low-thermal load, and minimal-noise communication links between cryogenic and room-temperature components. At the heart of modern telecommunication, lay optical…
In the process of molecular dynamics simulation studies of gold nanowires an interesting structure is discovered. This is a finite double-wall nanowire with a large empty core similar to single-wall and double-wall carbon nanotubes. The…
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Land\'e g-factor. Integrating InSb nanowires with other materials could…
A simple vapour deposition technique was used to prepare WO3 one-dimensional nanostructures.WO3 is sublimated at a relatively low temperature (550 1C) in air at atmospheric pressure.The sublimated species are condensed on mica substrate at…
Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retapping current in a down-sweep of the current, at which a nanowire re-enters the superconducting…
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 {\deg}C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto…
We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential…
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires,…
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane)…
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties,…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation…