Related papers: Development and operation of research-scale III-V …
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds with wide-ranging potential optoelectronic and electronic applications. However, the growth of III-V-Bi alloys requires group-III-rich growth…
Control of the crystallization process is central to developing novel materials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are…
We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical…
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline…
We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We…
We investigate the effect of curvature on the energy and stability of domain wall configurations in curved cylindrical nanotubes and nanowires. We use micromagnetic simulations to calculate the phase diagram for the transverse wall (TW) and…
We evaluate the performance of hybrid microwave resonators made by combining sputtered Nb thin films with Tungsten nanowires grown with a He-beam induced deposition technique. Depending on growth conditions the nanowires have a typical…
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were…
Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize…
We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance thus allowing both wide…
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical…
Nanomaterials bring to expression unique electronic properties that promote advanced functionality and technologies. Albeit, nanoscale growth presents paramount challenges for synthesis limiting the diversity in structures and compositions.…
Single-walled carbon nanotubes (SWCNTs) are promising for nanoscale electronics and photonics, but practical deployment requires chirality control. Most catalytic chemical vapor deposition (CCVD) growth of SWCNTs proceeds on liquid metal…
Metal atoms and small clusters introduced into superfluid helium (He II) concentrate there in quantized vortices to form (by further coagulation) the thin nanowires. The nanowires' thickness and structure are well predicted by a…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are…
Reduced dimensionality leads to emergent phenomena in quantum materials and there is a need for accelerated materials discovery of nanoscale quantum materials in reduced dimensions. Thermomechanical nanomolding is a rapid synthesis method…
This investigation deals with the effect of growth temperature on the growth behavior of Fe filled multiwalled carbon nanotubes (MWCNTs). Carbon nanotube (CNT) synthesis was carried out in a thermal chemical vapor deposition (CVD) reactor…