Related papers: Development and operation of research-scale III-V …

YBaCuO nanowires were reproducibly fabricated down to widths of 50 nm. A Au/Ti cap layer on YBCO yielded high electrical performance up to temperatures above 80 K in single nanowires. Critical current density of tens of MA/cm2 at T = 4.2 K…

The in-place growth of suspended carbon nanotubes facilitates the observation of both unperturbed electronic transport spectra and high-Q vibrational modes. For complex structures integrating, e.g., superconducting rf elements on-chip,…

Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction…

We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from…

Compound semiconducting nanowires are promising building blocks for several nanoelectronic devices yet the inability to reliably control their growth morphology is a major challenge. Here, we report the Au-catalyzed vapor-liquid-solid (VLS)…

Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the…

Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…

We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate, and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime,…

In the present work we grow self-organized Ta2O5 nanotube layers in a H2SO4/NH4F electrolyte at various elevated temperatures. Under optimized conditions we obtain 4 {\mu}m long nanotubes that are well adherent to the substrate and can be…

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid…

Several ten $\mu$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam…

We describe the development of 1x1 mm2 InAs thermoradiative diodes grown by molecular beam epitaxy with emphasis on their reverse saturation current and break-down voltage. P-i-n diode structures grown at 450 C, with As2 flux around 3 times…

We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings…

In order to understand properties of ultrathin copper nanowires, we have simulated several copper nanowires using classical molecular dynamic simulations. As the temperature increases, copper nanowires were transformed into structures of…

Radiative efficiency of highly luminescent bulk InP wafers severely degrades upon heat treatment involved in epitaxial growth of quaternary layers and fabrication of photodiodes on the surface. This unfortunate property impedes the use of…

Strained nanowires with varying InAs/InP core-shell thicknesses were grown using Chemical Beam Epitaxy. Microphotoluminescence spectroscopy, performed at low temperature, was then used to study the optical properties of single wires.…

We report here the growth and characterization of functional oxide nanowire of hole doped manganite of La0.5Sr0.5MnO3 (LSMO). We also report four probe electrical resistance measurement of single nanowire of LSMO (diameter ~ 45nm) using FIB…

Finite gold nanowires containing less than 1000 atoms are studied using the molecular dynamics simulation method and embedded atom potential. Nanowires with the face-centered cubic structure and the (111) oriented cross-section are prepared…

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…