Related papers: Single ion implantation for single donor devices u…
The possibility to apply active feedback to a single ion in a Penning trap using a fully digital system is demonstrated. Previously realized feedback systems rely on analog circuits that are susceptible to environmental fluctuations and…
This manuscript describes a radiation-hardened current-mode delta-sigma ADC fabricated in a standard 130 nm CMOS technology and qualified for total ionizing doses up to 100 Mrad. The operational signal range achieved with a 100 s…
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…
We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a…
Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor…
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…
Single-photon detectors (SPDs) are crucial in applications ranging from space, biological imaging to quantum communication and information processing. The SPDs that operate at room temperature are of particular interest to broader…
We present an alternative approach for interconnecting trapped ion processor nodes by a deterministic single ion transfer out of the trap, into a free space trajectory, followed by recapture in the trapping potential. Our experimental…
We introduce well-separated $^{87}$Rb$^+$ ions into an atomic ensemble by microwave ionization of Rydberg excitations and realize single-shot imaging of the individual ions with an exposure time of 1 $\mu$s. This imaging sensitivity is…
Neutral Beam Injectors (NBIs) based on negative ions are the workhorses of future fusion reactors, such as ITER, which they are expected to provide with up to \SI{33}{MW} of power to heat the fusion plasma. The negative hydrogen ions are…
Single photon detectors are indispensable tools in optics, from fundamental measurements to quantum information processing. The ability of superconducting nanowire single photon detectors to detect single photons with unprecedented…
Efficiently distinguishing photon numbers is a crucial yet challenging technology for various quantum information and quantum metrology applications. While superconducting transition edge sensors offer good photon-number-resolving (PNR)…
In this work we investigate operation in the Geiger mode of the new single photon avalanche photo diode (SPAD) SAP500 manufactured by Laser Components. This SPAD is sensitive in the range 400-1000nm and has a conventional reach-through…
Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing.…
A proton irradiation site for silicon detectors has been developed and commissioned at the Bonn Isochronous Cyclotron. The accelerator provides 14 MeV proton beams of up to 1 $\mu$A at beam widths of a few mm to the setup. Devices Under…
For the first time we have investigated the behavior of fully micro-fabricated low temperature metallic magnetic calorimeters (MMCs) after undergoing an ion-implantation process. This experiment had the aim to show the possibility to…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the…
Single-electron detectors are a key component of electron microscopes and advanced electron optics experiments. We present a YAG:Ce scintillator-based single-electron detector with a spatial resolution of 1 micrometer at an electron energy…
We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted…