Related papers: Single ion implantation for single donor devices u…
Single ion implantation using focused ion beam systems enables high spatial resolution and maskless doping for rapid and scalable engineering of materials for quantum technologies, particularly qubits and colour centres in solid-state…
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical…
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes…
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
Single ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on…
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated…
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field…
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots.…
We describe and experimentally implement a single-ion local thermometry technique with absolute sensitivity adaptable to all laser-cooled atomic ion species. The technique is based on the velocity-dependent spectral shape of a quasi-dark…
The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at…
We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs…
Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. Here, we introduce a novel single photon detection mechanism using highly photosensitive…
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection…
Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as…