Related papers: Screening and interlayer coupling in multilayer gr…
We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers…
We address the intrinsic polarisation and screening of external electric field in a broad range of ordered and twisted configurations of multilayer graphene, using an ab initio approach combining density functional theory and the Wannier…
Graphene field effect transistors (G-FETs) have appeared as suitable candidates for sensing charges and have thus attracted large interest for ion and chemical detections. In particular, their high sensitivity, chemical robustness,…
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…
We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which…
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator.…
The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space…
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an…