Related papers: Screening and interlayer coupling in multilayer gr…

The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find…

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…

The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic…

Graphene nanostrips with single or a few layers can be made into bending resonators with extremely high sensitivity to environment changes. In this work we study the effect of interlayer shear on resonant frequencies f of graphene…

Using a scanning electron microscope, we observed a reproducible, discrete distribution of secondary electron intensity stemming from an atomically thick graphene film on a thick insulating substrate. The discrete distribution made it…

We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to…

An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer…

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

Networks of graphene-based topological domain walls function as nano-scale interferometers of zero-line modes, with magnetic field and(or) scalar potential as the controlling parameters. In the absence of externally applied magnetic or…

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…

We investigate the role of various structural nonidealities on the performance of armchair-edge graphene nanoribbon field effect transistors (GNRFETs). Our results show that edge roughness dilutes the chirality dependence often predicted by…

The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While…

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field…

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality…

The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect…

We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that…

We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…