Related papers: Spin-filtering by field dependent resonant tunneli…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
Semiclassical solutions of two-dimensional Schrodinger equation with spin-orbit interaction and smooth potential are considered. In the leading order, spin polarization is in-plane and follows the evolution of the electron momentum for a…
An unpolarized charge current passing through a chaotic quantum dot with spin-orbit coupling can produce a spin polarized exit current without magnetic fields or ferromagnets. We use random matrix theory to estimate the typical spin…
We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix.…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of…
Spin transport typically relies on direct manipulation of the spin degree of freedom via magnetic fields, spin-orbit coupling, or engineered spin-dependent potentials. We show theoretically that directional spin currents can arise in a…
We have studied the current through a carbon nanotube quantum dot with one ferromagnetic and one normal-metal lead. For the values of gate voltage at which the normal lead is resonant with the single available non-degenerate energy level on…
We propose a new scheme of spin filtering employing ballistic nanostructures in two dimensional electron gases (2DEGs). The proposal is essentially based on the spin-orbit (SO) interaction arising from the lateral confining electric field.…
We compute the zero bias conductance of electrons through a single ballistic channel weakly coupled to a side quantum dot with Coulomb interaction. In contrast to the standard setup which is designed to measure the transport through the…
We study the effect of a magnetic field on the conductance through a strongly interacting quantum dot by using the finite temperature extension of Wilson's numerical renormalization group method to dynamical quantities. The quantum dot has…
Interacting one-dimensional conductors with Rashba spin-orbit coupling are shown to exhibit a spin-selective Peierls-type transition into a mixed spin-charge-density-wave state. The transition leads to a gap for one-half of the conducting…
We investigate a simple tight-binding Hamiltonian to understand the stability of spin-polarized transport of states with an arbitrary spin content in the presence of disorder. The general spin state is made to pass through a linear chain of…
The coherent spin dependent transport through a set of two capacitively coupled quantum dots placed in a magnetic field is considered within the equation of motion method. The magnetic field breaks the spin degeneracy. For special choices…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange…
We propose two new approaches for regulating spin polarization and spin inversion in a conducting junction within a tight-binding framework based on wave-guide theory. The system comprises a magnetic quantum ring with finite modulation in…
A planar ballistic structure is predicted to be highly effective in filtering electron spin from an unpolarized source into two output fluxes with the opposite and practically pure spin polarizations. The operability of the proposed device…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
The backscattering process of injected electrons on exchange-splitted levels of quantum well (QW) in ferromagnetic metal / insulator / semiconductor heterostructure is studied. It is found that, if one of the exchange-splitted levels lies…