Related papers: Low-noise top-gate graphene transistors

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases,…

We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the…

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…

Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices.…

Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into…

Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for…

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…

Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…

We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective…

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by…

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs.…

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…