We report on the low-frequency electronic noise in (AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f=10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier, and correspondingly, impact the electric current. The obtained results help to understand noise in Schottky barrier diodes made of ultra-wide-band-gap semiconductors and can be used for the material and device quality assessment.
@article{arxiv.2304.04744,
title = {Low-Frequency Electronic Noise in the Aluminum Gallium Oxide Schottky Barrier Diodes},
author = {Subhajit Ghosh and Dinusha Herath Mudiyanselage and Sergey Rumyantsev and Yuji Zhao and Houqiang Fu and Stephen Goodnick and Robert Nemanich and Alexander A. Balandin},
journal= {arXiv preprint arXiv:2304.04744},
year = {2023}
}